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trenchfet power mosfets 175 c rated maximum junction temperature low input capacitance

automotive fuel injection systems automotive wipers automotive door modules SUD35N05-26L vishay siliconix new product document number: 71443 s-03485?rev. a,16-apr-01 www.vishay.com 1 n-channel 55-v (d-s) 175 c mosfet v ds (v) r ds(on) ( ) i d (a) a 0.020 @ v gs = 10 v 35 55 0.026 @ v gs = 4.5 v 30 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD35N05-26L

parameter symbol limit unit drain-source voltage v ds 55 gate-source voltage v gs 20 v t c = 25 c 35 continuous drain current (t j = 175 c) b t c = 100 c i d 25 pulsed drain current i dm 80 a continuous source current (diode conduction) a i s 35 t c = 25 c 50 c maximum power dissipation t a = 25 c p d 7.5 b w operating junction and storage temperature range t j , t stg ?55 to 175 c

parameter symbol typical maximum unit t 10 sec 17 20 junction-to-ambient b steady state r thja 50 60 junction-to-case r thjc 2.5 3.0 c/w junction-to-lead r thjl 5.0 6.0 notes a. package limited. b. surface mounted on 1? x1? fr4 board, t 10 sec. c. see soa curve for voltage derating.
SUD35N05-26L vishay siliconix new product www.vishay.com 2 document number: 71443 s-03485 ? rev. a,16-apr-01

parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 55 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 44 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 44 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 5 v 35 a v gs = 10 v, i d = 20 a 0.0165 0.020 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 125 c 0.035 ds(on) v gs = 4.5 v, i d = 15 a 0.0215 0.026 forward transconductance b g fs v ds = 15 v, i d = 20 a 25 s dynamic a input capacitance c iss 885 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 185 pf reverse transfer capacitance c rss 80 total gate charge c q g 10.5 13 gate-source charge c q gs v ds = 25 v, v gs = 5 v, i d = 35 a 4 nc gate-drain charge c q gd ds gs d 4.8 turn-on delay time c t d(on) 5 8 rise time c t r v dd = 25 v, r l = 0.3 18 30 turn-off delay time c t d(off) v dd = 25 v, r l = 0.3 i d 35 a, v gen = 10 v, r g = 2.5 20 30 ns fall time c t f 100 150 source-drain diode ratings and characteristic (t c = 25 c) continuous current i s 35 pulsed current i sm 80 a diode forward voltage b v sd i f = 80 a, v gs = 0 v 1.5 v source-drain reverse recovery time t rr i f = 35 a, di/dt = 100 a/ s 25 40 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
SUD35N05-26L vishay siliconix new product document number: 71443 s-03485 ? rev. a,16-apr-01 www.vishay.com 3

0.00 0.01 0.02 0.03 0.04 0 20406080100 0 4 8 12 16 20 0 10203040 0 20 40 60 80 100 012345678 0 20 40 60 80 100 0246810 0 10 20 30 40 50 60 0 20406080100 0 300 600 900 1200 1500 0 1122334455 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 25 c 125 c 5 v t c = ? 55 c v ds = 25 v i d = 35 a v gs = 10 thru 6 v v gs = 10 v v gs = 4.5 v c rss t c = ? 55 c 25 c 125 c 4 v c oss c iss i d ? drain current (a) 3 v 2 v
SUD35N05-26L vishay siliconix new product www.vishay.com 4 document number: 71443 s-03485 ? rev. a,16-apr-01

(normalized) ? on-resistance ( r ds(on) ) 0.0 0.4 0.8 1.2 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.2 0.4 0.6 0.8 1.2 v gs = 10 v i d = 20 a t j = 25 c t j = 175 c 0 1.0
0 10 20 30 40 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 500 10 0.1 0.1 1 10 100 1 100 t c = 25 c single pulse normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 normalized effective transient thermal impedance maximum avalanche drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 10 s 10 ms 100 ms dc 1 s 30 limited by r ds(on) 100 s

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